Terahertz emission of SiGe/Si quantum wells doped with shallow acceptors

I. V. Altukhov, M. S. Kagan, V. P. Sinis, S. G. Thomas, K. L. Wang, K. A. Chao, A. Blom, M. O. Odnoblyudov, I. N. Yassievich

研究成果: Conference contribution

摘要

THz emission of stimulated character is observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by well parallel QW structure planes owing total internal reflection is necessary for the emission. The model of possible population inversion of strain-split acceptor levels is proposed.

原文English
主出版物標題Proceedings of the 8th International Symposium Nanostructures
主出版物子標題Physics and Technology
編輯Zh. alferov, L. Esaki, ZH. Alferov, L. Esaki
頁面80-83
頁數4
出版狀態Published - 2000
事件Proceedings of the 8th International Symposium Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
持續時間: 2000 六月 192000 六月 23

出版系列

名字Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

Conference

ConferenceProceedings of the 8th International Symposium Nanostructures: Physics and Technology
國家/地區Russian Federation
城市St. Petersburg
期間00-06-1900-06-23

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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