Terahertz radiation from InAlAs and GaAs surface intrinsic-N + structures and the critical electric fields of semiconductors

J. S. Hwang, H. C. Lin, K. I. Lin, X. C. Zhang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

This study examines terahertz radiation from a series of In0.52 Al0.48 As and GaAs surface-intrinsic- N+ structures (SI N+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SI N+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

原文English
文章編號121107
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號12
DOIs
出版狀態Published - 2005 九月 19

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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