Termination switching of antiferromagnetic proximity effect in topological insulator

Chao Yao Yang, Lei Pan, Alexander J. Grutter, Haiying Wang, Xiaoyu Che, Qing Lin He, Yingying Wu, Dustin A. Gilbert, Padraic Shafer, Elke Arenholz, Hao Wu, Gen Yin, Peng Deng, Julie Ann Borchers, William Ratcliff, Kang L. Wang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

This work reports the ferromagnetism of topological insulator, (Bi,Sb)2Te3 (BST), with a Curie temperature of approximately 120 K induced by magnetic proximity effect (MPE) of an antiferromagnetic CrSe. The MPE was shown to be highly dependent on the stacking order of the heterostructure, as well as the interface symmetry: Growing CrSe on top of BST results in induced ferromagnetism, while growing BST on CrSe yielded no evidence of an MPE. Cr-termination in the former case leads to double-exchange interactions between Cr3+ surface states and Cr2+ bulk states. This Cr3+-Cr2+ exchange stabilizes the ferromagnetic order localized at the interface and magnetically polarizes the BST Sb band. In contrast, Se-termination at the CrSe/BST interface yields no detectable MPE. These results directly confirm the MPE in BST films and provide critical insights into the sensitivity of the surface state.

原文English
文章編號eaaz8463
期刊Science Advances
6
發行號33
DOIs
出版狀態Published - 2020 8月

All Science Journal Classification (ASJC) codes

  • 多學科

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