Textured magnesium titanate as gate oxide for GaN-based metal-oxide-semiconductor capacitor

Chu Yun Hsiao, Chuan-Feng Shih, Chih Hua Chien, Cheng-Liang Huang

研究成果: Article

12 引文 斯高帕斯(Scopus)

摘要

We demonstrate the first high-permittivity ceramic oxide for use as the gate oxide of the GaN-based metal-oxide-semiconductor (MOS) capacitor. An ilmenite magnesium titanate (MgTiO3) thin film prepared by sputtering was studied. When oxygen was introduced during sputtering, the preferred orientation changed from spinel Mg2TiO4 (111) to ilmenite MgTiO3 (003). The X-ray diffractometry Î-2Î andφ-scans were performed to identify the preferred films. Possible epitaxial relationships at the Mg2TiO4 (111)/GaN (001) and MgTiO3 (003)/GaN (001) interfaces were proposed. Finally, the electrical properties of the Al/MgTiO3 (003)/GaN (001)/Al MOS capacitor were presented.

原文English
頁(從 - 到)1005-1007
頁數3
期刊Journal of the American Ceramic Society
94
發行號4
DOIs
出版狀態Published - 2011 四月 1

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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