The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guo, M. L. Lee, C. S. Lin, J. K. Sheu, Y. S. Wu, C. K. Sun, C. H. Kuo, C. J. Tun, J. W. Shi

研究成果: Conference contribution

摘要

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

原文English
主出版物標題Conference on Lasers and Electro-Optics, CLEO 2009
出版狀態Published - 2009
事件Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
持續時間: 2009 五月 312009 六月 5

出版系列

名字Optics InfoBase Conference Papers
ISSN(電子)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2009
國家/地區United States
城市Baltimore, MD
期間09-05-3109-06-05

All Science Journal Classification (ASJC) codes

  • 儀器
  • 原子與分子物理與光學

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