The bias-crystallization mechanism on structural characteristics and electrical properties of Zn-In-Sn-O film

Kuan Jen Chen, Fei Yi Hung, Truan Sheng Lui, Shoou Jinn Chang, Zhan Shuo Hu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The Zn-In-Sn-O (ZITO) transparent conductive oxide (TCO) films were deposited onto indium/glass substrate by co-sputtering system. The bias-crystallization mechanism (BCM) was used to promote the quality of ZITO films. After biasing treatment (biased at 4V for 20 min), the resistivity of ZITO film reduced from 3.08 × 10-4 Ω*cm to 6:3 × 10-5 Ω*cm. This reduction was attributed to the indium ions diffused into ZITO film using BCM. According to the Joule's law and Ohm's law, the required energy of biasing treatment was only 480 Joule. Comparing with traditional annealed treatment (annealing at 500°C for 20 min in vacuum required 9:8 × 106 Joule), BCM had improved the conductivity of ZITO film in a short time at room temperature and possessed an excellent competitiveness of cost.

原文English
頁(從 - 到)1560-1564
頁數5
期刊Materials Transactions
52
發行號8
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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