The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

M. H. Liu, Yeong-Her Wang, Mau-phon Houng, J. F. Chen, A. Y. Cho

研究成果: Paper

摘要

The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

原文English
DOIs
出版狀態Published - 1994 一月 1
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 1994 七月 121994 七月 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家Taiwan
城市Hsinchu
期間94-07-1294-07-15

指紋

Resonant tunneling
Carrier transport
Current voltage characteristics
indium arsenide

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Liu, M. H., Wang, Y-H., Houng, M., Chen, J. F., & Cho, A. Y. (1994). The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771157
Liu, M. H. ; Wang, Yeong-Her ; Houng, Mau-phon ; Chen, J. F. ; Cho, A. Y. / The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan.
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Liu, MH, Wang, Y-H, Houng, M, Chen, JF & Cho, AY 1994, 'The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures', 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan, 94-07-12 - 94-07-15. https://doi.org/10.1109/EDMS.1994.771157

The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. / Liu, M. H.; Wang, Yeong-Her; Houng, Mau-phon; Chen, J. F.; Cho, A. Y.

1994. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan.

研究成果: Paper

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AU - Chen, J. F.

AU - Cho, A. Y.

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N2 - The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

AB - The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

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Liu MH, Wang Y-H, Houng M, Chen JF, Cho AY. The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. 1994. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771157