The characteristic of abrasive particle in chemical - Mechanical polishing

H. J. Tsai, C. C. Chang, Y. R. Jeng, S. L. Chen

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Chemical Mechanical Polishing (CMP) is the key technique for wafer global planarization. However, the characteristic of abrasive particle, including particle size and grain/grain collision elasticity, plays an important role in CMP process. This investigation analyzes the slurry flow between the wafer and pad using a grain flow model with partial hydrodynamic lubrication theory. This model predicts the film thickness and remove rate of the slurry flow under a variety of the CMP parameters including load, rotation speed, pad roughness, grain/grain collision elasticity and grain size. The theoretical results compare well with the previous experiment data. This study elucidates the grain characteristics during CMP process. It also contributes to the understanding of abrasive particle effects in the chemical mechanical polishing mechanism.

原文English
主出版物標題Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
發行者Trans Tech Publications Ltd
頁面805-810
頁數6
版本PART 2
ISBN(列印)0878499903, 9780878499908
DOIs
出版狀態Published - 2006 1月 1
事件2005 International Conference on Advanced Manufacture, ICAM2005 - Taipei, R.O.C., Taiwan
持續時間: 2005 11月 282005 12月 2

出版系列

名字Materials Science Forum
號碼PART 2
505-507
ISSN(列印)0255-5476
ISSN(電子)1662-9752

Other

Other2005 International Conference on Advanced Manufacture, ICAM2005
國家/地區Taiwan
城市Taipei, R.O.C.
期間05-11-2805-12-02

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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