The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors

C. H. Liu, C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. H. Liu, B. R. Huang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

SiO2 layers were deposited onto SiC by photo-chemical vapor deposition (photo-CVD) using deuterium (D2) lamp as the excitation source. For the photo-SiO2 deposited 500 °C, interface state density (Dit) was estimated to be 5.66 × 1011 cm-2 eV-1. With an applied electric field of 4 MV cm-1, it was found that the leakage current was only 3.15 × 10-8 A cm-2 for the photo-CVD SiO2 layer prepared at 500 °C. It was also found that photo-SiO2 could effectively suppress dark current of SiC-based photodetectors (PDs). It was found that we could reduce dark current of SiC-based PDs by about three orders of magnitude by the insertion of a 5 nm-thick photo-CVD SiO2 film in between Indium-tin-oxide (ITO) contact and the underneath SiC. Photocurrent to dark current ratio of ITO/SiO2/SiC MIS PDs was also found to be much larger than that of conventional ITO/SiC Schottky barrier PDs.

原文English
頁(從 - 到)142-146
頁數5
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
100
發行號2
DOIs
出版狀態Published - 2003 七月 15

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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