SiO2 layers were deposited onto SiC by photo-chemical vapor deposition (photo-CVD) using deuterium (D2) lamp as the excitation source. For the photo-SiO2 deposited 500 °C, interface state density (Dit) was estimated to be 5.66 × 1011 cm-2 eV-1. With an applied electric field of 4 MV cm-1, it was found that the leakage current was only 3.15 × 10-8 A cm-2 for the photo-CVD SiO2 layer prepared at 500 °C. It was also found that photo-SiO2 could effectively suppress dark current of SiC-based photodetectors (PDs). It was found that we could reduce dark current of SiC-based PDs by about three orders of magnitude by the insertion of a 5 nm-thick photo-CVD SiO2 film in between Indium-tin-oxide (ITO) contact and the underneath SiC. Photocurrent to dark current ratio of ITO/SiO2/SiC MIS PDs was also found to be much larger than that of conventional ITO/SiC Schottky barrier PDs.
|頁（從 - 到）||142-146|
|期刊||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|出版狀態||Published - 2003 七月 15|
All Science Journal Classification (ASJC) codes