The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

Wei-Chi Lai, Y. S. Huang, Y. W. Yen, Jinn-Kong Sheu, T. H. Hsueh, C. H. Kuo, Shoou-Jinn Chang

研究成果: Conference article

7 引文 斯高帕斯(Scopus)

摘要

We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

原文English
頁(從 - 到)1639-1641
頁數3
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
5
發行號6
DOIs
出版狀態Published - 2008 十二月 1
事件7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
持續時間: 2007 九月 162007 九月 21

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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