TY - GEN
T1 - The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate
AU - Yu, Sheng Fu
AU - Chang, Shoou Jinn
AU - Chang, Sheng Po
AU - Lin, Ray Ming
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - We demonstrated very thick (∼400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.
AB - We demonstrated very thick (∼400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.
UR - http://www.scopus.com/inward/record.url?scp=77951738743&partnerID=8YFLogxK
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U2 - 10.1117/12.840824
DO - 10.1117/12.840824
M3 - Conference contribution
AN - SCOPUS:77951738743
SN - 9780819479983
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Gallium Nitride Materials and Devices V
T2 - Gallium Nitride Materials and Devices V
Y2 - 25 January 2010 through 28 January 2010
ER -