The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate

Sheng Fu Yu, Shoou Jinn Chang, Sheng Po Chang, Ray Ming Lin

研究成果: Conference contribution

摘要

We demonstrated very thick (∼400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.

原文English
主出版物標題Gallium Nitride Materials and Devices V
DOIs
出版狀態Published - 2010 五月 7
事件Gallium Nitride Materials and Devices V - San Francisco, CA, United States
持續時間: 2010 一月 252010 一月 28

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7602
ISSN(列印)0277-786X

Other

OtherGallium Nitride Materials and Devices V
國家United States
城市San Francisco, CA
期間10-01-2510-01-28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

指紋 深入研究「The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate」主題。共同形成了獨特的指紋。

  • 引用此

    Yu, S. F., Chang, S. J., Chang, S. P., & Lin, R. M. (2010). The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate. 於 Gallium Nitride Materials and Devices V [76020B] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7602). https://doi.org/10.1117/12.840824