The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate

Kang Ping Peng, Ya Chi Liu, I. Feng Lin, Chih Chien Lin, Shu Wei Huang, Chao Cheng Ting

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.

原文English
主出版物標題IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(列印)9781538649299
DOIs
出版狀態Published - 2018 八月 30
事件25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore
持續時間: 2018 七月 162018 七月 19

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2018-July

Conference

Conference25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
國家/地區Singapore
城市Singapore
期間18-07-1618-07-19

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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