The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate

Kang Ping Peng; Ya Chi Liu; I. Feng Lin; Chih Chien Lin; Shu Wei Huang; Chao Cheng Ting

doi:10.1109/IPFA.2018.8452177

The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate

Kang Ping Peng, Ya Chi Liu, I. Feng Lin, Chih Chien Lin, Shu Wei Huang, Chao Cheng Ting

研究教育組

研究成果: Conference contribution

4 引文斯高帕斯（Scopus）

摘要

In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.

原文	English
主出版物標題	IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（列印）	9781538649299
DOIs	https://doi.org/10.1109/IPFA.2018.8452177
出版狀態	Published - 2018 8月 30
事件	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore 持續時間: 2018 7月 16 → 2018 7月 19

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
卷	2018-July

Conference

Conference	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
國家/地區	Singapore
城市	Singapore
期間	18-07-16 → 18-07-19

All Science Journal Classification (ASJC) codes

電氣與電子工程

存取文件

10.1109/IPFA.2018.8452177

其它文件與鏈接

引用此

Peng, K. P., Liu, Y. C., Lin, I. F., Lin, C. C., Huang, S. W., & Ting, C. C. (2018). The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate. 於 IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits 文章 8452177 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2018-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2018.8452177

Peng, Kang Ping ; Liu, Ya Chi ; Lin, I. Feng 等. / The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate. IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{6c6070e4e0ad43558cf28205994b0f62,

title = "The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate",

abstract = "In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.",

author = "Peng, {Kang Ping} and Liu, {Ya Chi} and Lin, {I. Feng} and Lin, {Chih Chien} and Huang, {Shu Wei} and Ting, {Chao Cheng}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 ; Conference date: 16-07-2018 Through 19-07-2018",

year = "2018",

month = aug,

day = "30",

doi = "10.1109/IPFA.2018.8452177",

language = "English",

isbn = "9781538649299",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits",

address = "United States",

}

Peng, KP, Liu, YC, Lin, IF, Lin, CC, Huang, SW & Ting, CC 2018, The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate. 於 IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits., 8452177, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 卷 2018-July, Institute of Electrical and Electronics Engineers Inc., 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018, Singapore, Singapore, 18-07-16. https://doi.org/10.1109/IPFA.2018.8452177

The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate. / Peng, Kang Ping; Liu, Ya Chi; Lin, I. Feng 等.
IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. 8452177 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2018-July).

研究成果: Conference contribution

TY - GEN

T1 - The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate

AU - Peng, Kang Ping

AU - Liu, Ya Chi

AU - Lin, I. Feng

AU - Lin, Chih Chien

AU - Huang, Shu Wei

AU - Ting, Chao Cheng

PY - 2018/8/30

Y1 - 2018/8/30

N2 - In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.

AB - In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.

UR - http://www.scopus.com/inward/record.url?scp=85053875768&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053875768&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2018.8452177

DO - 10.1109/IPFA.2018.8452177

M3 - Conference contribution

AN - SCOPUS:85053875768

SN - 9781538649299

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018

Y2 - 16 July 2018 through 19 July 2018

ER -

Peng KP, Liu YC, Lin IF, Lin CC, Huang SW, Ting CC. The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate. 於 IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc. 2018. 8452177. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2018.8452177

The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate

摘要

出版系列

Conference

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此