The doped quantum well gate fet fabricated by low-pressure MOCVD

W. Lin, M. D. Lei, W. C. Hsu, L. B. Di, F. Kai, C. Y. Chang

研究成果: Article同行評審

摘要

The doped quantum well FETs with Al0.5Ga0.5As/GaAs heterostructures have been fabricated using the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. The conventional δ-doping thin layer in MODFET has been replaced with a doped Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum well. Doping level in the GaAs quantum well was varied to observe the effects on the 2-DEG density in the channel. The corresponding IDsat was increased from 12 mA to 27 mA at Vg=0 V for increasing the doping levelin the well.

原文English
頁(從 - 到)L2431-L2433
期刊Japanese Journal of Applied Physics
27
發行號12A
DOIs
出版狀態Published - 1988 十二月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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