The doping process of p-type GaN films

G. G. Chi, C. H. Kuo, J. K. Sheu, C. J. Pan

研究成果: Conference article

12 引文 斯高帕斯(Scopus)

摘要

The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.

原文English
頁(從 - 到)210-213
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
75
發行號2-3
DOIs
出版狀態Published - 2000 六月 1
事件The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China
持續時間: 1999 六月 131999 六月 18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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