The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.
|頁（從 - 到）||210-213|
|期刊||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|出版狀態||Published - 2000 六月 1|
|事件||The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China|
持續時間: 1999 六月 13 → 1999 六月 18
All Science Journal Classification (ASJC) codes