The effect of band offset on the negative differential resistance characteristics of GaAs resonant tunnelling devices

研究成果: Article

摘要

AlGaAs/GaAs heterojunction resonant tunnelling bipolar transistors, with superlattice base, have been fabricated. For the single heterojunction structure an S-shaped NDR behaviour can be obtained when it is forward biased, due to the impact ionization enhancement in the AlGaAs/GaAs heterojunction. While it is reverse biased an N-shaped NDR behaviour comes after an insignificant S-shaped behaviour. It is believed to be the initiation of a resonant tunnelling process across the superlattice region. As for the double heterojunction structure, the I-V characteristic shows a bi-directional S-shaped switching behaviour. The different performance between the two structures can be modelled as the effect of the band offset of the heterojunction.

原文English
文章編號009
頁(從 - 到)886-889
頁數4
期刊Semiconductor Science and Technology
6
發行號9
DOIs
出版狀態Published - 1991 十二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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