TY - GEN
T1 - The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates
AU - Dhere, Ramesh
AU - Bonnet-Eymard, Max
AU - Charlet, Emilie
AU - Peter, Emmanuelle
AU - Duenow, Joel
AU - Moutinho, Helio
AU - Li, Jian V.
AU - Scott, Marty
AU - Albin, Dave
AU - Gessert, Tim
PY - 2010/12/20
Y1 - 2010/12/20
N2 - In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.
AB - In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.
UR - https://www.scopus.com/pages/publications/78650145079
UR - https://www.scopus.com/pages/publications/78650145079#tab=citedBy
U2 - 10.1109/PVSC.2010.5616929
DO - 10.1109/PVSC.2010.5616929
M3 - Conference contribution
AN - SCOPUS:78650145079
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 340
EP - 344
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -