The effect of interface shape on dislocation generation during crystal growth

Ke Ming Chen, Jin Yuan Hsieh, Chi-Chuan Hwang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

原文English
頁(從 - 到)385-394
頁數10
期刊International Communications in Heat and Mass Transfer
19
發行號3
DOIs
出版狀態Published - 1992 1月 1

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 一般化學工程
  • 凝聚態物理學

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