The effect of interface shape on dislocation generation during crystal growth

Ke Ming Chen; Jin Yuan Hsieh; Chi-Chuan Hwang

doi:10.1016/0735-1933(92)90084-U

The effect of interface shape on dislocation generation during crystal growth

Ke Ming Chen
, Jin Yuan Hsieh
, Chi-Chuan Hwang

工程科學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

原文	English
頁（從 - 到）	385-394
頁數	10
期刊	International Communications in Heat and Mass Transfer
卷	19
發行號	3
DOIs	https://doi.org/10.1016/0735-1933(92)90084-U
出版狀態	Published - 1992 1月 1

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
一般化學工程
凝聚態物理學

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10.1016/0735-1933(92)90084-U

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abstract = "We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20\%, under normal operation condition.",

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AU - Hwang, Chi-Chuan

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N2 - We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

AB - We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

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The effect of interface shape on dislocation generation during crystal growth

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