GaN nanowires (NWs) have been synthesized on platinum-coated silicon(111) substrates by the chemical vapor deposition (CVD) method under different NH3 H2 carrier gas-flow rate ratios. X-ray diffractometer and transmission electron microscope analyses indicate that GaN NWs have wurtzite structures. Nanoscale protrusions with crystal orientation along the  direction were observed on the surface of GaN NWs grown under high H2 flow rate conditions. As compared to the field-emission result of GaN NWs with smooth surfaces, GaN NWs with nanoscale protrusions exhibit a lower turn-on field of 8.5 Vμm and a higher field-enhancement factor of Β=315. These nanoscale protrusions are believed to account for the enhancement of the field-emission behaviors of GaN NWs.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry