The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector

Wei Lun Huang, Cheng Hsun Li, Sheng Po Chang, Shoou Jinn Chang

研究成果: Article

摘要

In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.

原文English
頁(從 - 到)Q3213-Q3216
期刊ECS Journal of Solid State Science and Technology
8
發行號7
DOIs
出版狀態Published - 2019 一月 1

指紋

Photodetectors
Partial pressure
Metals
Annealing
Semiconductor materials
Oxygen
Magnetron sputtering
Transparency
Sputtering
Energy gap
Lighting
Wavelength
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

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title = "The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector",
abstract = "In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80{\%} cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.",
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T1 - The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector

AU - Huang, Wei Lun

AU - Li, Cheng Hsun

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.

AB - In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.

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