The effect of post-oxide annealing on H2O2-grown Al2O3, AlGaN/GaN polarization charges and MOS-HEMT performances

Han Yin Liu, Wei-Chou Hsu, Ching Sung Lee, Bo Yi Chou, Wen Chia Ou, Yi Hsuan Wang, Wei Fan Chen

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

This work investigates the effect of post oxide annealing (POA) on the AlGaN/GaN MOS-HEMT with a gate oxide grown by the H2O2 oxidation technique. The experimental results suggest that the gate dielectric layer with the POA treatment improves the dielectric material quality and MOS-HEMT performances. The dielectric breakdown field (EBD) of Al2O3 is improved from 6.5 to 7.9 MV/cm. In addition, the hysteresis measurement suggests that the fixed charges in Al2O3 and the interface charges (Dit) at Al2O3/AlGaN interface are reduced. This work also finds that the POA affects polarization charge density and improves MOS-HEMT performances.

原文English
主出版物標題Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面592-595
頁數4
1
ISBN(電子)9781479931965
DOIs
出版狀態Published - 2014 十一月 5
事件2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
持續時間: 2014 四月 262014 四月 28

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
國家/地區Japan
城市Sapporo City, Hokkaido
期間14-04-2614-04-28

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

深入研究「The effect of post-oxide annealing on H<sub>2</sub>O<sub>2</sub>-grown Al<sub>2</sub>O<sub>3</sub>, AlGaN/GaN polarization charges and MOS-HEMT performances」主題。共同形成了獨特的指紋。

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