The effect of the thickness and oxygen ratio control of radio-frequency magnetron sputtering on MgZnO thin-film transistors

Jyun Yi Li, Sheng Po Chang, Shoou Jinn Chang, Hung Hsu Lin, Ming Hung Hsu

研究成果: Article

1 引文 (Scopus)

摘要

In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V·s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.

原文English
頁(從 - 到)2037-2040
頁數4
期刊Journal of Nanoscience and Nanotechnology
17
發行號3
DOIs
出版狀態Published - 2017 三月 1

指紋

Magnesium Oxide
Zinc Oxide
thickness ratio
Magnesia
Thin film transistors
Zinc oxide
Radio
Magnetron sputtering
Oxide films
Sputtering
radio frequencies
magnetron sputtering
transistors
magnesium oxides
Oxygen
zinc oxides
Gate dielectrics
oxygen
Oxygen vacancies
thin films

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

引用此文

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abstract = "In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14{\%} to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V·s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.",
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T1 - The effect of the thickness and oxygen ratio control of radio-frequency magnetron sputtering on MgZnO thin-film transistors

AU - Li, Jyun Yi

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Lin, Hung Hsu

AU - Hsu, Ming Hung

PY - 2017/3/1

Y1 - 2017/3/1

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