The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 solar cells

Jian V. Li, Xiaonan Li, Ana Kanevce, Yanfa Yan, Ingrid Repins

研究成果: Conference contribution

摘要

We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

原文English
主出版物標題2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
頁面127-130
頁數4
DOIs
出版狀態Published - 2009
事件2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
持續時間: 2009 6月 72009 6月 12

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
國家/地區United States
城市Philadelphia, PA
期間09-06-0709-06-12

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 工業與製造工程
  • 電氣與電子工程

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