In this study, radio frequency magnetron sputtering was used to prepare Al-Si film anodes and the effect of both pre-sputtered Al thin film and oxygen fraction(17 → 7 at. %) within the Al-Si film on the charge-discharge capacity characteristics are discussed. The pre-sputtered 40nm Al thin film not only reduced the resistivity of the composite anode film, but also diffused to prevent peeling between the Al-Si films and Cu foils after annealing in the vacuum. Owing to the above reasons, the stability for the charge-discharge cycling life at high temperature (55°C) was achieved. The reduction of oxygen fraction in the Al-Si film also led to an improvement on capacity of the anode.