摘要
The effects of chloromethane on diamond nucleation and growth were studied by employing laser reflective interferometry. Chloromethane enhances the film-growth rate only slightly compared to methane. However, chloromethane greatly enhances the nucleation density and shortens the film-forming stage, more significantly at a lower temperature. Thus, chloromethane facilitates the low temperature growth mainly through the enhancement of nucleation. Nucleation density is strongly dependent on the compositions of H atoms and carbon species prior to diamond growth. The residual diamond seeds by diamond-grit scratching are suggested to be the major nucleation sites. Chloromethane can enhance diamond nucleation by protecting the residual seeds from being etched by H atoms.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 2498-2504 |
| 頁數 | 7 |
| 期刊 | Journal of Materials Research |
| 卷 | 13 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 1998 9月 |
All Science Journal Classification (ASJC) codes
- 一般材料科學
- 凝聚態物理學
- 材料力學
- 機械工業
指紋
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