The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol-gel technology and annealing

P. T. Hsieh, Y. C. Chen, M. S. Lee, K. S. Kao, M. C. Kao, M. P. Houng

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22 引文 斯高帕斯(Scopus)

摘要

ZnO thin films were successfully deposited on SiO2/Si substrate using the sol-gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.

原文English
頁(從 - 到)1-6
頁數6
期刊Journal of Sol-Gel Science and Technology
47
發行號1
DOIs
出版狀態Published - 2008 七月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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