The effects of oxygen content on bonding configurations and properties of low-k organosilicate glass dielectric films

Sheng Wen Chen, Chuan-Pu Liu, Shiu Ko JangJian, Ying Lang Wang

研究成果: Article

摘要

The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O 2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si-O-Si cage structure change.

原文English
頁(從 - 到)2549-2553
頁數5
期刊Journal of Nanoscience and Nanotechnology
8
發行號5
DOIs
出版狀態Published - 2008 五月 1

指紋

Dielectric films
Porosity
Pore size
Glass
Permittivity
Oxygen
porosity
glass
oxygen
configurations
permittivity
Gases
X-Rays
Plasma enhanced chemical vapor deposition
X ray scattering
Electric properties
adjusting
electrical properties
vapor deposition
scattering

All Science Journal Classification (ASJC) codes

  • Medicine(all)

引用此文

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abstract = "The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O 2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si-O-Si cage structure change.",
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The effects of oxygen content on bonding configurations and properties of low-k organosilicate glass dielectric films. / Chen, Sheng Wen; Liu, Chuan-Pu; JangJian, Shiu Ko; Wang, Ying Lang.

於: Journal of Nanoscience and Nanotechnology, 卷 8, 編號 5, 01.05.2008, p. 2549-2553.

研究成果: Article

TY - JOUR

T1 - The effects of oxygen content on bonding configurations and properties of low-k organosilicate glass dielectric films

AU - Chen, Sheng Wen

AU - Liu, Chuan-Pu

AU - JangJian, Shiu Ko

AU - Wang, Ying Lang

PY - 2008/5/1

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AB - The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O 2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si-O-Si cage structure change.

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