TY - JOUR
T1 - The enhanced electrode-dependent resistive random access memory based on BiFeO3
AU - Chuang, Ricky W.
AU - Shih, Chung Chieh
AU - Huang, Cheng-Liang
N1 - Funding Information:
This research was funded by the National Science and Technology Council (formerly the Ministry of Science and Technology), R.O.C. (Taiwan), two grants with the number: MOST 110-2221-E-006-205 and MOST 111-2221-E-006-224.
Funding Information:
This research was funded by the Ministry of Science and Technology, R.O.C. (Taiwan), two Grants with the Numbers: MOST 110-2221-E-006-205 and MOST 111-2221-E-006-224.
Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.
PY - 2023/5
Y1 - 2023/5
N2 - The electrode-dependent resistive random access memories (ReRAM) with aluminum, silver, platinum, and indium tin oxide (ITO) judiciously selected as a pair of electrodes, and the bismuth ferrite (BiFeO3 or BFO) as the active dielectric layer, are fabricated for elaborate characterizations. The Ag/BFO/Pt and Ag/BFO/ITO ReRAMs have reflected excellent electrical properties, notably for the Ag/BFO/ITO combination. The Ag/BFO/ITO endures more than 1200 switching cycles and an excellent (> 102) on/off current or resistance ratio. The retention time in both high and low resistance states could reach 104 s and beyond. It has been found that the electrochemical metallization mechanism dominated by metal ion migration and the valence change mechanism dictated by oxygen vacancy conduction are inseparable from the establishment and destruction of the conductive filament. Moreover, a ReRAM with a dual dielectric layer of BFO/α-Fe2O3) is also prepared for comparison. A special “two-step reset” phenomenon is observed which could be explained with filament theory.
AB - The electrode-dependent resistive random access memories (ReRAM) with aluminum, silver, platinum, and indium tin oxide (ITO) judiciously selected as a pair of electrodes, and the bismuth ferrite (BiFeO3 or BFO) as the active dielectric layer, are fabricated for elaborate characterizations. The Ag/BFO/Pt and Ag/BFO/ITO ReRAMs have reflected excellent electrical properties, notably for the Ag/BFO/ITO combination. The Ag/BFO/ITO endures more than 1200 switching cycles and an excellent (> 102) on/off current or resistance ratio. The retention time in both high and low resistance states could reach 104 s and beyond. It has been found that the electrochemical metallization mechanism dominated by metal ion migration and the valence change mechanism dictated by oxygen vacancy conduction are inseparable from the establishment and destruction of the conductive filament. Moreover, a ReRAM with a dual dielectric layer of BFO/α-Fe2O3) is also prepared for comparison. A special “two-step reset” phenomenon is observed which could be explained with filament theory.
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U2 - 10.1007/s00339-023-06619-9
DO - 10.1007/s00339-023-06619-9
M3 - Article
AN - SCOPUS:85160003440
SN - 0947-8396
VL - 129
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 5
M1 - 329
ER -