The enhancement of the electron field emission behavior of diamond/CNTs materials via the plasma post-treatment process for the applications in triode-type vacuum field emission transistor

Divinah Manoharan, Hsin Tze Chang, I. Nan Lin, Ting Hsun Chang, Ping Yen Hsieh, Srinivasu Kunuku, Keh Chyang Leou, Chi Young Lee, Nyan Hwa Tai

研究成果: Conference contribution

摘要

Plasma post-treatment (ppt) process for enhancing the electron field emission (EFE) properties of diamond/CNTs films for the applications in triode vacuum field emission (VFE) transistors is being reported. The EFE properties of UNCD/CNTs films were markedly improved by modifying the granular structure by ppt-process. The factor which resulted in enhanced EFE properties is due to the formation of nano-graphitic layers, while the nano-sized diamond grains coalesced. The triode VFE transistors performance was also significantly enhanced due to the utilization of DGC/CNTs (or HiD/CNTs) films as cathode that renders the triode VFE transistors possessing great potential for applications in vacuum microelectronics.

原文English
主出版物標題2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509024193
DOIs
出版狀態Published - 2016 八月 24
事件29th International Vacuum Nanoelectronics Conference, IVNC 2016 - Vancouver, Canada
持續時間: 2016 七月 112016 七月 15

出版系列

名字2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

Conference

Conference29th International Vacuum Nanoelectronics Conference, IVNC 2016
國家/地區Canada
城市Vancouver
期間16-07-1116-07-15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 電氣與電子工程
  • 原子與分子物理與光學

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