The fabrication of PB(ZR,TI)O3 films on a AL/AL 2O3 structure employing a crack amendment process

Bing Huei Chen, Cheng Liang Huang, Long Wu

研究成果: Conference article

摘要

Pb(Zr,Ti)O3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al2O3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (Pr) and coercive field (Ec) are around 11.39 c/cm2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al2O3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al2O3 structure.

原文English
頁(從 - 到)1742-1745
頁數4
期刊Proceedings of the IEEE Ultrasonics Symposium
2
出版狀態Published - 2003 十二月 1
事件2003 IEEE Ultrasonics Symposium - Proceedings - Honolulu, HI, United States
持續時間: 2003 十月 52003 十月 8

指紋

cracks
fabrication
thin films
baking
gels
drying
lead acetates
heating
towers
sol-gel processes
acetates
sintering
alcohols
titanium
resonators
broadband
catalysts
preparation
acids
crystal structure

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics

引用此文

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abstract = "Pb(Zr,Ti)O3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al2O3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (Pr) and coercive field (Ec) are around 11.39 c/cm2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al2O3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al2O3 structure.",
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AU - Wu, Long

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N2 - Pb(Zr,Ti)O3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al2O3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (Pr) and coercive field (Ec) are around 11.39 c/cm2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al2O3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al2O3 structure.

AB - Pb(Zr,Ti)O3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al2O3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (Pr) and coercive field (Ec) are around 11.39 c/cm2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al2O3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al2O3 structure.

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