The formation of p-Type ZnO films by thermal diffusion from the low energy, high dose phosphorus-implanted Si substrate

Yi Jen Huang, Chung Wei Liu, Sheng Yuan Chu, Kuang Yao Lo

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The p-type ZnO film is obtained out of thermal diffusion of phosphorus (P) atoms from the low energy, high dose implanted Si substrate through rapid thermal annealing (RTA). Many nonactivated P atoms exist on the surface of the shallow-implanted Si substrate and easily out-diffuse into the ZnO films at lower RTA temperatures. The concentration of the p-type ZnO reached 1.13× 1019 cm-3. The p-ZnO/n-Si heterojunction was fabricated using the one-step RTA process. This method offers various choices of dopants with low energy, high dose implanting into silicon without considering the restriction of the substrate.

原文English
頁(從 - 到)H435-H437
期刊Journal of the Electrochemical Society
157
發行號4
DOIs
出版狀態Published - 2010 三月 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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