The p-type ZnO film is obtained out of thermal diffusion of phosphorus (P) atoms from the low energy, high dose implanted Si substrate through rapid thermal annealing (RTA). Many nonactivated P atoms exist on the surface of the shallow-implanted Si substrate and easily out-diffuse into the ZnO films at lower RTA temperatures. The concentration of the p-type ZnO reached 1.13× 1019 cm-3. The p-ZnO/n-Si heterojunction was fabricated using the one-step RTA process. This method offers various choices of dopants with low energy, high dose implanting into silicon without considering the restriction of the substrate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry