The geometry effect on threshold voltage of top-contact and bottom contact pentacene based thin film transistors

Yu Wu Wang, De Zhi Liu, Ming Yue Hong, Horng-Long Cheng

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

In this article, we fabricated a series of different geometries for pentacene based thin film transistors (TFTs), including top contact (TC) and bottom contact (BC) configurations, to monitor variations in characteristics. The threshold voltage (Vth) in the saturation regime shifted toward a positive voltage, i.e., from 0.5, 3.2, 9.1, 12.1, and 19.5 V for the channel lengths 67, 47, 23, 19, and 15 μm, respectively, in BC TFTs. All of the TFTs were operated in depletion mode. However, the Vth in the linear regime shifted from -9.3, -9.0, -3.8, -1.8, and 1.5 V for the same devices. Most of the TFTs in the linear regime were operated in enhanced mode. The phenomenon is believed to be strongly correlated with the longitudinal electric field (VDS/L). The high VDS induces a high carrier injection, which makes the pentacene TFTs behave like a depletion type transistor. This assumption is evidenced by the low carrier injection with small VDS results. The device configuration and space charge region must be discussed in more detail. Furthermore, the field effect mobility variation and structure configuration effect is discussed in more detail within the full manuscript.

原文English
主出版物標題Organic Field-Effect Transistors VIII
DOIs
出版狀態Published - 2009 十二月 1
事件Organic Field-Effect Transistors VIII - San Diego, CA, United States
持續時間: 2009 八月 32009 八月 5

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7417
ISSN(列印)0277-786X

Other

OtherOrganic Field-Effect Transistors VIII
國家/地區United States
城市San Diego, CA
期間09-08-0309-08-05

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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