The growth and segregation of intermetallic compounds in the bulk of flip chip Sn2.4Ag solder joint under electrical current stressing

Wei Chieh Wang, Kwang-Lung Lin, Ying Ta Chiu, Yi Shao Lai

研究成果: Conference contribution

5 引文 斯高帕斯(Scopus)

摘要

This paper reports a peculiar growth and segregation behavior of IMC in a flip chip joint with Sn2.4Ag solder bump under electrical current stressing. A set of two neighboring solder joints were adopted for investigation at 1.5∼3.0×104 A/cm2 of current stressing at various temperatures up to 180°C. One of the joint experiences current flow from substrate to the Si chip while opposite for the other joint. The size analysis with SEM imaging shows that the Ag3Sn IMCs formed in the bulk during current stressing grows following the empirical equation Δr (radius change) = ktn with n =1.1, indicating a reaction controlled kinetics. The activation energy of the Ag3Sn IMC growth was estimated to be 11.5 (at 3.0 × 104 A/cm2) ∼14.0 (at 1.0×104 A/cm2) kJ/mole. Both Cu6Sn 5 and Cu3Sn were formed at the joint/metallization interface, while only Cu6Sn5 were found in the bulk. The SEM investigation at various cross sections from center to one end of the hemisphere for a joint, current stressed with 1.5×104A/cm 2 at 180°C for 330 hours, shows a serious segregation of the Cu6Sn5 IMC closing to the end portion of the bump. A mechanism incorporating IMC dissolution, electromigration, and thermomigration was proposed to explain the segregation behavior.

原文English
主出版物標題2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
頁面1600-1605
頁數6
DOIs
出版狀態Published - 2013 九月 9
事件2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States
持續時間: 2013 五月 282013 五月 31

出版系列

名字Proceedings - Electronic Components and Technology Conference
ISSN(列印)0569-5503

Other

Other2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
國家/地區United States
城市Las Vegas, NV
期間13-05-2813-05-31

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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