The growth mechanism of GaN grown by hydride vapor phase epitaxy in N 2 and H2 carrier gas

Hai Ping Liu, Jenq Dar Tsay, Wen Yueh Liu, Yih Der Guo, Jung Tsung Hsu, In Gann Chen

研究成果: Article

26 引文 斯高帕斯(Scopus)

摘要

This paper investigates the growth mechanism of GaN for the hydride vapor phase epitaxy (HVPE) process in the N2 and H2 carrier gas ambients. Differences are observed between the surface morphologies of GaN films grown in N2 carrier gas and those grown in H2 carrier gas. It is determined that the GaN growth direction and growth rate are both affected by H2 flow rate. In N2 ambient, the {1 1̄ 0 1} facet is stable, because of the N-polarity and high dangling bond density (DB) of {1 1̄ 0 1} facet. On the other hand, in H2 ambient, and the {1 1̄ 0 0} facet becomes stable. In this paper, this phenomenon will be explained by the atomic configuration model of the GaN wurtzite structure.

原文English
頁(從 - 到)79-84
頁數6
期刊Journal of Crystal Growth
260
發行號1-2
DOIs
出版狀態Published - 2004 一月 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

指紋 深入研究「The growth mechanism of GaN grown by hydride vapor phase epitaxy in N <sub>2</sub> and H<sub>2</sub> carrier gas」主題。共同形成了獨特的指紋。

  • 引用此