The Growth of Diamond Film by Halogenated Methane

Franklin Chau Nan Hong, Gou Tsau Liang, Dawson Chang, Shu Cheng Yu

研究成果: Chapter

7 引文 斯高帕斯(Scopus)

摘要

Diamond film was grown by hot-filament chemical vapor deposition method. Carbon-halogen bond is much weaker than carbon-hydrogen bond. Therefore, carbon-halogen bond breaks easily at hot filament, and the halogen atoms produced will further induce reactions to generate hydrogen atoms to facilitate diamond film growth. The growth of high quality diamond film by CCl4/H2 mixture was succeeded. Faster nucleation rates of diamond film were observed by CH2C12 than those by CH4. The reaction mechanism will be discussed by camparing the results between CH4, CH2Cl2, CHCl3 and CCl4. They suggest that the active precursors for diamond growth are probably methyl radicals.

原文English
主出版物標題Materials Science Monographs
頁面577-582
頁數6
版本C
DOIs
出版狀態Published - 1991 一月 1

出版系列

名字Materials Science Monographs
號碼C
73
ISSN(列印)0166-6010

All Science Journal Classification (ASJC) codes

  • Metals and Alloys

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  • 引用此

    Hong, F. C. N., Liang, G. T., Chang, D., & Yu, S. C. (1991). The Growth of Diamond Film by Halogenated Methane. 於 Materials Science Monographs (C 編輯, 頁 577-582). (Materials Science Monographs; 卷 73, 編號 C). https://doi.org/10.1016/B978-0-444-89162-4.50094-4