The growth of GaN nanorods with different temperature by molecular beam epitaxy

Kuang Yuan Hsu, Cheng Yu Wang, Chuan-Pu Liu

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The growth and optical properties of GaN nanorods grown by plasma-assisted molecular beam epitaxy are investigated as a function of growth temperature with and without the presence of an AlN buffer. When grown on bare Si(111), an increase in the growth temperature leads to a reduction in nanorod diameter and an increase in density. The diffusion-induced mechanism has a greater impact on enhancing the growth of nanorods on the AlN buffer surface as compared to that on bare Si(111). The GaN nanorod density is influenced by the presence of the AlN buffer and can be controlled by varying the growth temperature. The low density of 6.23× 109 cm-2 of GaN nanorods is achieved without altering the nanorod size.

原文English
期刊Journal of the Electrochemical Society
157
發行號5
DOIs
出版狀態Published - 2010 4月 27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 材料化學
  • 電化學

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