The impact of gate-to-source tunneling current on the characterization of metal-oxide-semiconductor field-effect transistor's hot-carrier reliability

Jone F. Chen, Chih Pin Tsao, T. C. Ong

研究成果: Article同行評審

摘要

Drain current (Id) degradation due to Fowler-Nordheim (FN) stress and Vg = Vd stress were investigated in 0.15 μm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under Vg = Vd stress, the damage resulting from gate-to-source tunneling current is not negligible in comparison with the damage caused by channel hot carriers. Id degradation models of pMOSFETs under FN stress and Vg = Vd stress were established. According to the Id degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.

原文English
頁(從 - 到)2149-2151
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號4 B
DOIs
出版狀態Published - 2003 四月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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