Drain current (Id) degradation due to Fowler-Nordheim (FN) stress and Vg = Vd stress were investigated in 0.15 μm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under Vg = Vd stress, the damage resulting from gate-to-source tunneling current is not negligible in comparison with the damage caused by channel hot carriers. Id degradation models of pMOSFETs under FN stress and Vg = Vd stress were established. According to the Id degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.
|頁（從 - 到）||2149-2151|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2003 四月|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)