The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices

Ricky W. Chuang, Ming Cheng Huang, You Kui Hu, Zhe Ya Zheng

研究成果: Conference contribution

摘要

In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile memory feature. In order to operate RRAM in an ultraviolet (UV) spectroscopic regime, the spectral transparency of electrodes and reliable device performance are keys to ensuring its continual applicability. Among the materials considered, nickel oxide (NiO) potentially has a broad perspective in optical applications due to their relatively wide bandgap, high mobility, high transparency, remarkably good electrical and optical characteristics. It is foreseeable in the future that the unique applicability of RRAM in UV will make its headway as a key component in many optoelectronic displaying products. The present study focuses on using Radio Frequency Magnetron Sputtering method to prepare NiO active layer and indium tin oxide (ITO) top electrode for the realization of RRAM devices and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are subsequently evaluated with and without the irradiation of ultraviolet light. Specifically, a series of reliability tests show that the fabricated memories have endured up to 100 switching cycles and the current contrast ratio between high (HRS) and low (LRS) resistance state at 0.1V has achieved more than two orders of magnitude. Furthermore, the retention time measurement has also demonstrated that the memory storage capability of these RRAMs remains in excellent operating condition after surviving more than 10,000 seconds of the test. Major attention is concentrated on finding out a correlation between the UV responsivity and switching characteristics for NiO RRAMs biased at low voltage. We found that the memory states associated with the RRAM of the smallest feature sizes could be toggled relatively easily by UV irradiation at the smallest size.

原文English
主出版物標題Integrated Optics
主出版物子標題Devices, Materials, and Technologies XXIV
編輯Sonia M. Garcia-Blanco, Pavel Cheben
發行者SPIE
ISBN(電子)9781510633292
DOIs
出版狀態Published - 2020
事件Integrated Optics: Devices, Materials, and Technologies XXIV 2020 - San Francisco, United States
持續時間: 2020 二月 32020 二月 6

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
11283
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceIntegrated Optics: Devices, Materials, and Technologies XXIV 2020
國家/地區United States
城市San Francisco
期間20-02-0320-02-06

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

指紋

深入研究「The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices」主題。共同形成了獨特的指紋。

引用此