The influence of different partial pressure on the fabrication of ingao ultraviolet photodetectors

Sheng Po Chang, Li Yang Chang, Jyun Yi Li

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively.

原文English
文章編號2145
期刊Sensors (Switzerland)
16
發行號12
DOIs
出版狀態Published - 2016 十二月 15

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

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