The influence of dual-carrier recombination and release on electrical characteristics of pentacene-based ambipolar transistors

Liang Yun Chiu, Horng Long Cheng, Wei Yang Chou, Fu Ching Tang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Electrical characteristics of pentacene-based ambipolar organic field-effect transistors (OFETs) are examined and are shown to significantly differ from those of unipolar OFETs. The electrical and hysteresis characteristics of the ambipolar OFETs depend on the applied source-drain bias and sweeping gate voltage range. The ambipolar OFET characteristics, such as charge mobility, subthreshold swing, threshold voltage, and off-current level, are controlled by the dual-carrier recombination and release process, through which opposite-sign charges can capture and release majority charges. This study contributes to advancing the development of more applications based on ambipolar OFETs.

原文English
文章編號193302
期刊Applied Physics Letters
103
發行號19
DOIs
出版狀態Published - 2013 十一月 4

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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