The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

Mau-phon Houng, Yeong-Her Wang, C. L. Shen, J. F. Chen, A. Y. Cho

研究成果: Conference contribution

摘要

The authors have demonstrated a novel resonant interband tunneling device with GaSb/AlSb/InAs/GaSb/AlSb/InAs structures. It is found that InAs well thicknesses have a significant influence on the I-V characteristics of this device. The incorporation of an InAs layer in the well region will promote a peak-to-valley ratio of 20 at 300 K, nearly five times larger than that of the primitive one. Furthermore, multiple negative differential resistance behavior was obtained with InAs well thicknesses were in the range of 120 A to 300 A. Otherwise, single negative resistance is obtained. The significant influence of the added InAs layer on the electrical performance of the corresponding structure is found to be due to the electron-light hole coupling effect.

原文English
主出版物標題International Electron Devices Meeting 1991, IEDM 1991
發行者Institute of Electrical and Electronics Engineers Inc.
頁面817-820
頁數4
ISBN(電子)0780302435
DOIs
出版狀態Published - 1991 一月 1
事件International Electron Devices Meeting, IEDM 1991 - Washington, United States
持續時間: 1991 十二月 81991 十二月 11

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
1991-January
ISSN(列印)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
國家United States
城市Washington
期間91-12-0891-12-11

指紋

Resonant tunneling
Negative resistance
resonant tunneling
Electrons
valleys
electrons
indium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Houng, M., Wang, Y-H., Shen, C. L., Chen, J. F., & Cho, A. Y. (1991). The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure. 於 International Electron Devices Meeting 1991, IEDM 1991 (頁 817-820). [235299] (Technical Digest - International Electron Devices Meeting, IEDM; 卷 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235299
Houng, Mau-phon ; Wang, Yeong-Her ; Shen, C. L. ; Chen, J. F. ; Cho, A. Y. / The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure. International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. 頁 817-820 (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "The authors have demonstrated a novel resonant interband tunneling device with GaSb/AlSb/InAs/GaSb/AlSb/InAs structures. It is found that InAs well thicknesses have a significant influence on the I-V characteristics of this device. The incorporation of an InAs layer in the well region will promote a peak-to-valley ratio of 20 at 300 K, nearly five times larger than that of the primitive one. Furthermore, multiple negative differential resistance behavior was obtained with InAs well thicknesses were in the range of 120 A to 300 A. Otherwise, single negative resistance is obtained. The significant influence of the added InAs layer on the electrical performance of the corresponding structure is found to be due to the electron-light hole coupling effect.",
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Houng, M, Wang, Y-H, Shen, CL, Chen, JF & Cho, AY 1991, The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure. 於 International Electron Devices Meeting 1991, IEDM 1991., 235299, Technical Digest - International Electron Devices Meeting, IEDM, 卷 1991-January, Institute of Electrical and Electronics Engineers Inc., 頁 817-820, International Electron Devices Meeting, IEDM 1991, Washington, United States, 91-12-08. https://doi.org/10.1109/IEDM.1991.235299

The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure. / Houng, Mau-phon; Wang, Yeong-Her; Shen, C. L.; Chen, J. F.; Cho, A. Y.

International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 817-820 235299 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 1991-January).

研究成果: Conference contribution

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AB - The authors have demonstrated a novel resonant interband tunneling device with GaSb/AlSb/InAs/GaSb/AlSb/InAs structures. It is found that InAs well thicknesses have a significant influence on the I-V characteristics of this device. The incorporation of an InAs layer in the well region will promote a peak-to-valley ratio of 20 at 300 K, nearly five times larger than that of the primitive one. Furthermore, multiple negative differential resistance behavior was obtained with InAs well thicknesses were in the range of 120 A to 300 A. Otherwise, single negative resistance is obtained. The significant influence of the added InAs layer on the electrical performance of the corresponding structure is found to be due to the electron-light hole coupling effect.

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Houng M, Wang Y-H, Shen CL, Chen JF, Cho AY. The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure. 於 International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 817-820. 235299. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1991.235299