The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films

Chao Hsuing Chen, Shui Jinn Wang, Rong Ming Ko, Yi Cheng Kuo, Kai Ming Uang, Tron Min Chen, Bor Wen Liou, Hao Yi Tsai

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited W films prepared under different O 2/Ar flow rate ratios (OAFRRs) in the sputtering gas is reported. After thermally annealing at 700-850 °C in N2 ambient for 15 min, dense and well crystalline W18O49 (010) nanowires or nanobelts were obtained depending on the oxygen content in the sputtering gas. Experimental results show that the annealing temperature required for the full growth of W18O49 nanowires reduced when the OAFRR in the sputtering gas was increased. It is found that the oxygen absorbed in the surface region is responsible for the growth of nanowires. As the OAFRR was increased to (8 sccm)/(24 sccm), which resulted in a saturated oxygen content of about 55 at.% inside the W film, large-scale nanobelts or nanosheets of W18O49 were grown. The possible growth mechanism which governs the evolution from nanowires to nanobelts as the OAFRR was changed is also discussed.

原文English
頁(從 - 到)217-223
頁數7
期刊Nanotechnology
17
發行號1
DOIs
出版狀態Published - 2006 一月 14

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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