The influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells

Yen Lin Lai, Chuan Pu Liu, Tao Hung Hsueh, Yung Hsiang Lin, Hung Chin Chung, Ray Ming Lin, Zheng Quan Chen

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The effect of barrier growth temperatures on blue InGaN (2 nm)/GaN (12 nm) multiple quantum wells was studied with samples grown by metallorganic chemical vapour deposition. It was found that InGaN active layers composed of InGaN quasi-dots of 2 ± 0.2 nm in diameter, changing from their homogeneous nature, could be obtained by elevating the barrier growth temperature from 700 to 800°C based on the results of energy-filtered high resolution transmission electron microscopy. These dots may have formed during the ramping process by in situ annealing. Strong piezoelectric field, 'S-shape-like' carrier transition and high internal quantum efficiency of 71.3% were observed in the sample with a higher barrier growth temperature closely related to the dot formation. Furthermore, the forward voltage and the light output power at 20 mA of light emitting diodes from the sample with dots were 0.3 V lower and 11% higher than that from the homogeneous multiple quantum wells.

原文English
文章編號003
頁(從 - 到)4300-4306
頁數7
期刊Nanotechnology
17
發行號17
DOIs
出版狀態Published - 2006 八月 1

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

指紋

深入研究「The influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells」主題。共同形成了獨特的指紋。

引用此