The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Tien Yu Wang, Wei Chih Lai, Qiao Ju Xie, Shun Hao Yang, Sheng Po Chang, Cheng Huang Kuo, Jinn Kong Sheu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h−1 to 200 nm h−1. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.

原文English
頁(從 - 到)5437-5443
頁數7
期刊RSC Advances
13
發行號8
DOIs
出版狀態Published - 2023 2月 13

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 一般化學工程

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