The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films

K. J. Chen, F. Y. Hung, S. J. Chang, J. D. Liao, C. C. Weng, Z. S. Hu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The quality of co-sputtering derived Zn-In-Sn-O (ZITO) film was adjusted by different gas (oxygen and argon) induced plasma ions bombarding (PIB) treatment. The result showed that the film conductivity could be improved after plasma bombardment. The increment of oxygen vacancies and plasma bombard-induced thermal energy were main reasons. Notably, the efficiency of Ar plasma bombarded for improved conductivity not only was better but also had a smoother surface morphology. Due to Ar ions will not react with metal atoms to form oxide and possessed a higher momentum. In addition, the O-rich layer on the ultra-surface not only was removed but also enhanced film reliability by plasma bombarded that could enhance the performance of optoelectronic devices.

原文English
頁(從 - 到)1157-1163
頁數7
期刊Applied Surface Science
258
發行號3
DOIs
出版狀態Published - 2011 十一月 15

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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