TY - JOUR
T1 - The inter-metallic oxide of ZnO/ITO/ZnO tri-layer films using a heat-induced diffusion mechanism
AU - Chen, Kuan Jen
AU - Hung, Fei Yi
AU - Lui, Truan Sheng
AU - Chang, Sheng Po
AU - Wang, Wen Lung
N1 - Funding Information:
The authors are grateful to National Cheng Kung University , the Instrument Center , the Center for Micro/Nano Science and Technology ( D100-2700 ) and NSC 100-2221-E-006-093 ; NSC 100-2221-E-006-094 ; NSC 100-2622-E-006-030-CC3 for the financial support.
PY - 2013/5/15
Y1 - 2013/5/15
N2 - This study presents a bias-crystallization mechanism (BCM) that is based on ZnO/In/ZnO tri-layer film and thermal annealing treatment on ZnO/ITO/ZnO tri-layer films. After biasing (40 V, 0.025 A), the resistivity of the ZnO/In/ZnO sample was reduced to 1.35 × 10 -2 Ω cm. Bias-induced Joule heat and indium ion diffusion were critical factors with regard to decreasing resistivity. When substituted for the metal indium layer, the ZnO/ITO (13 nm)/ZnO thin film demonstrated comparatively better electrical properties and optical transmittance. During thermal annealing, the indium and tin atoms in the ITO structure diffused into the ZnO matrix and improved the conductivity of the tri-layer film. Inter-metallic oxide (IMO) was formed in the interface between the ZnO and the interlayer, and it dominated the crystallization characteristics as well as the optical and electrical properties of the tri-layer films.
AB - This study presents a bias-crystallization mechanism (BCM) that is based on ZnO/In/ZnO tri-layer film and thermal annealing treatment on ZnO/ITO/ZnO tri-layer films. After biasing (40 V, 0.025 A), the resistivity of the ZnO/In/ZnO sample was reduced to 1.35 × 10 -2 Ω cm. Bias-induced Joule heat and indium ion diffusion were critical factors with regard to decreasing resistivity. When substituted for the metal indium layer, the ZnO/ITO (13 nm)/ZnO thin film demonstrated comparatively better electrical properties and optical transmittance. During thermal annealing, the indium and tin atoms in the ITO structure diffused into the ZnO matrix and improved the conductivity of the tri-layer film. Inter-metallic oxide (IMO) was formed in the interface between the ZnO and the interlayer, and it dominated the crystallization characteristics as well as the optical and electrical properties of the tri-layer films.
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U2 - 10.1016/j.apsusc.2013.02.084
DO - 10.1016/j.apsusc.2013.02.084
M3 - Article
AN - SCOPUS:84876413527
SN - 0169-4332
VL - 273
SP - 598
EP - 602
JO - Applied Surface Science
JF - Applied Surface Science
ER -