The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet

Kow Ming Chang, Bo Wen Huang, Chien Hung Wu, Hsin Ying Chen, You Xian Zheng, Ming Chuan Lee, Yu Xin Zhang, Chuang Ju Lin, Yu Hsuan Cheng, Shui Jinn Wang, Jui Mei Hsu, Yu Li Lin

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm2/V·S, VT of 1.11 V, lower subthreshold swing of 93 mV/decade, higher Ion/Ioff of 5.34×107. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.

原文English
主出版物標題16th International Conference on Nanotechnology - IEEE NANO 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面405-407
頁數3
ISBN(電子)9781509039142
DOIs
出版狀態Published - 2016 十一月 21
事件16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
持續時間: 2016 八月 222016 八月 25

出版系列

名字16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
國家Japan
城市Sendai
期間16-08-2216-08-25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Chang, K. M., Huang, B. W., Wu, C. H., Chen, H. Y., Zheng, Y. X., Lee, M. C., Zhang, Y. X., Lin, C. J., Cheng, Y. H., Wang, S. J., Hsu, J. M., & Lin, Y. L. (2016). The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet. 於 16th International Conference on Nanotechnology - IEEE NANO 2016 (頁 405-407). [7751471] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751471