The investigation for various treatments of InAlGaP Schottky diodes

研究成果: Conference article

7 引文 (Scopus)

摘要

We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.

原文English
頁(從 - 到)99-102
頁數4
期刊Optical Materials
23
發行號1-2
DOIs
出版狀態Published - 2003 一月 1
事件Proceedings of the 8th ICEM 2002 - XI'an, China
持續時間: 2002 六月 102002 六月 14

指紋

Schottky diodes
surface treatment
Surface treatment
Diodes
Oxides
oxides
etchants
Electric breakdown
electrical faults
electric contacts
Buffers
buffers
Metals
broadband
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

引用此文

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abstract = "We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.",
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The investigation for various treatments of InAlGaP Schottky diodes. / Lee, Hsin Ying; Lee, Ching Ting.

於: Optical Materials, 卷 23, 編號 1-2, 01.01.2003, p. 99-102.

研究成果: Conference article

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AB - We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.

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