TY - JOUR
T1 - The investigation of preferred orientation growth of ZnO films on the PbTiO3-based ceramics and its application for SAW devices
AU - Chu, Sheng Yuan
AU - Chen, Te Yi
AU - Water, Walter
PY - 2003/10
Y1 - 2003/10
N2 - Poly-crystal ZnO films with c-axis (0 0 2) orientation have been successfully grown on the lead-based ceramic substrates by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition time, argon-oxygen gas flow ratio, and RF power. Crystalline structures of the films were investigated by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and RF power of 70W for 3h. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of surface acoustic wave (SAW) device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.
AB - Poly-crystal ZnO films with c-axis (0 0 2) orientation have been successfully grown on the lead-based ceramic substrates by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition time, argon-oxygen gas flow ratio, and RF power. Crystalline structures of the films were investigated by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and RF power of 70W for 3h. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of surface acoustic wave (SAW) device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.
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U2 - 10.1016/S0022-0248(03)01452-0
DO - 10.1016/S0022-0248(03)01452-0
M3 - Article
AN - SCOPUS:0041360354
SN - 0022-0248
VL - 257
SP - 280
EP - 285
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -