The localised vibrational mode two-phonon absorption of carbon in gallium arsenide

L. Z. Zhang; Y. C. Du; B. R. Zhang; Y. H. Wang; B. C. Ma; G. G. Gin

doi:10.1088/0953-8984/1/25/015

The localised vibrational mode two-phonon absorption of carbon in gallium arsenide

L. Z. Zhang, Y. C. Du, B. R. Zhang, Y. H. Wang, B. C. Ma, G. G. Gin

微電子工程研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

It is found that the 1115 and 1157 cm^-1 absorption bands in GaAs doped intentionally with ¹³C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of ¹²C _As and ¹³C_As. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for ¹²C and ¹³C in GaAs are about 87 at 300 K and 75 at 10 K, respectively.

原文	English
文章編號	015
頁（從 - 到）	4025-4028
頁數	4
期刊	Journal of Physics: Condensed Matter
卷	1
發行號	25
DOIs	https://doi.org/10.1088/0953-8984/1/25/015
出版狀態	Published - 1989

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學

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10.1088/0953-8984/1/25/015

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abstract = "It is found that the 1115 and 1157 cm-1 absorption bands in GaAs doped intentionally with 13C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of 12C As and 13CAs. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for 12C and 13C in GaAs are about 87 at 300 K and 75 at 10 K, respectively.",

author = "Zhang, {L. Z.} and Du, {Y. C.} and Zhang, {B. R.} and Wang, {Y. H.} and Ma, {B. C.} and Gin, {G. G.}",

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AU - Zhang, L. Z.

AU - Du, Y. C.

AU - Zhang, B. R.

AU - Wang, Y. H.

AU - Ma, B. C.

AU - Gin, G. G.

PY - 1989

Y1 - 1989

N2 - It is found that the 1115 and 1157 cm-1 absorption bands in GaAs doped intentionally with 13C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of 12C As and 13CAs. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for 12C and 13C in GaAs are about 87 at 300 K and 75 at 10 K, respectively.

AB - It is found that the 1115 and 1157 cm-1 absorption bands in GaAs doped intentionally with 13C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of 12C As and 13CAs. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for 12C and 13C in GaAs are about 87 at 300 K and 75 at 10 K, respectively.

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JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

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The localised vibrational mode two-phonon absorption of carbon in gallium arsenide

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